Tel: +86-372-3175078
E-mail: aydwyj@dwyjgs.com

Contact
ATTN: Li Xin
E-MAIL: aydwyj@dwyjgs.com
TEL: +86-372-3175078
Address: West Of Mengjia Village Road, Longqu Road, Long'an District, Anyang City, Henan Province

Preparation Of Ferro Silicon Alloy

             The Fesi compound has been widely used in the fields of electronics, photoelectric, thermoelectric and magnetism, and has become a hotspot material for people's attention and research. At the same time, with the development of electronic information equipment in the direction of Intellectualization, digitization, miniaturization, high-frequency and even ultra-high frequency, the thin film of the materials has been developing trend. The magnetic properties of Fesi thin films are widely used in the field of high-frequency information, so it is necessary to study the high frequency magnetic properties of Fesi films. In this paper, the effects of different preparation conditions on the microstructure, magnetostatic properties and spin-rectifying voltage of fesi thin films were studied by changing the substrate material, sputtering power and annealing temperature by magnetron sputtering method.Ferro Silicon Alloy

             First, the Fesi film was grown on the glass substrate, and the sputtering pressure was 0.6Pa, 0.8Pa, 1.0Pa, 1.2Pa and 1.4Pa. The results show that the prepared film is amorphous. With the increase of sputtering pressure, the saturation magnetization of the film increased and then decreased, and reached the maximum value of 15543 at 1.0Pa. 52Gs. The Fesi film is grown on Si (100) substrate, and the sputtering power is 20W, 40W, 60W, 80W and 100W respectively. The results show that the Fesi films deposited on SI substrates have different degrees of crystallization, and the diffraction peaks such as FE3SI (200) and fe3si (220) appear. In the range of 20w~100w sputtering power, MS first increases and then decreases, reaching the maximum value of 10509 at 60W. 24Gs. ferromagnetic resonance linewidth under 4GHz frequency? H decreases with the increase of sputtering power overall, from the maximum value of $number. 21Oe to the minimum value of a. 18Oe. In order to study the effect of annealing temperature on the properties of Fesi thin films, the annealing of 200 ℃, 300 ℃, 400 ℃, 500 ℃ and 600 ℃ temperature was selected by selecting Si (100) substrate and sputtering power of 40W and 100W respectively. With the increase of annealing temperature, the Fesi film prepared under 40W low sputtering power is improved, and the annealing temperature has little effect on crystallization when the temperature exceeds 400 ℃.Ferro Silicon Alloy

             Compared with the annealing, the value of saturation magnetization MS increased, and with the increase of annealing temperature Ms first increased and then decreased, and reached the maximum value of 14417 at 400 ℃. 18Gs. ferromagnetic resonance linewidth under 4GHz frequency? H decreases with the increase of annealing temperature overall, from the maximum value of $number. 79Oe to the minimum $number. 18Oe. The effect of annealing temperature on the crystallization of Fesi films grown under 100W high sputtering power is very small. When the annealing temperature is within the 200℃~600℃ range, the value of the saturation magnetization Ms decreases gradually, from 200 ℃ to 10361.46Gs to 600 ℃ 8320.1Gs. ferromagnetic resonance linewidth under 4GHz frequency? H decreased with the increase of annealing temperature obviously, from the maximum value of $number. 91Oe to the minimum value of $number. 24Oe. Using the micro-strip clamp method to test the spin rectification effect, because the magnetic field signal is weak, resulting in a greater noise test. In this paper, a resonant cavity is designed and fabricated to test the spin rectification effect of ferromagnetic films, and the results show that the method can obtain a larger signal and signal-to-noise ratio.Ferro Silicon Alloy